Perhaps it is too early to talk about the future generation of the Galaxy S range, but nevertheless we have been seeing leaks about the future Korean terminal for two days. If a couple of days ago, we saw how a performance test of the Galaxy S7 under a Snapdragon 820, now we see something different.
This time, the device that has passed through this Geekbench performance test has not been a SoC manufactured by Qualcomm, but rather a processor manufactured by Samsung itself and, this processor is the Exynos 8890.
The Galaxy S7 or now known as Project Lucky will see birth during the first quarter of 2016, so from here until the day for its presentation we will not stop seeing leaks and rumors about the next flagship of the Korean company.
Thanks to a Geekbench benchmark, we have noticed that Samsung is testing various prototypes under different hardware. To begin with, a performance test was leaked a couple of days ago where the terminal was running under a Snapdragon 820. Now we see how the device that has passed through the benchmark runs under a chip Exynos 8890 and that, in addition to that different SoC with respect to the first leaks, different variants also appear depending on their RAM memory.
As you can see in the images, there is data on the version of 3 GB RAM memory as well as the version 4 GB. We do not know if Samsung will bet on two different models or is testing how the future Galaxy S7 moves under different hardware configurations. Among other specifications we see how Samsung would equip its next flagship under a 20 Megapixel camera with a new photographic sensor and with the possibility of expanding the storage of the terminal under the micro-SD slot.